SELECTIVE METAL CAP IN AN INTERCONNECT STRUCTURE

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United States of America Patent

APP PUB NO 20240274555A1
SERIAL NO

18313746

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Abstract

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Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Kuan-Hung Taichung, TW 3 1
Huang, Kevin Hsinchu, TW 89 1229
Jang, Syun-Ming Hsinchu, TW 381 6833
Kuo, Chih-Cheng Taipei, TW 21 146
Lai, Yi-An Hsinchu, TW 24 43
Lee, Ya-Lien Baoshan Township, TW 56 568
Lin, Chun-Chieh Taichung, TW 141 1346
Lo, Wei-Jen Hsinchu, TW 41 161
Su, Hung-Wen Jhubei, TW 117 1406
Tsai, Ming-Hsing Chu-Pei, TW 146 1928
Tseng, Chih-Han Tainan, TW 3 0

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