Importance

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Abstract

An ion implanter and a method for reducing particle formation in a process chamber are disclosed. The ion implanter includes one or more gas sources in communication with the process chamber to introduce an oxygen-containing gas. After certain criteria has been met, a gas treatment process is initiated. This criteria may be related to the number of workpieces that have been processed or based on the number of particles detected in the process chamber. During the gas treatment process, the oxygen-containing gas is introduced and interacts with depositions disposed on the walls of the process chamber to transform the brittle film into a softer more pliable film that may be less susceptible to breaking. In some embodiments, the oxygen-containing gas may be oxygen gas, ozone or oxygen radicals which are introduced to the process chambers. In some embodiments, water vapor is introduced.

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First Claim