HIGH RESOLUTION, LOW ENERGY ELECTRON MICROSCOPE FOR PROVIDING TOPOGRAPHY INFORMATION AND METHOD OF MASK INSPECTION
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United States of America Patent
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Issued Date -
Aug 15, 2024
app pub date -
Apr 10, 2024
filing date -
Oct 28, 2021
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A corrected scanning electron microscope (CSEM) and a method of operating the CSEM for selectively separating a material contrast from a topography contrast is presented. The microscope and the method enable high imaging resolution with backscattered electrons generated from low energy primary electrons. The CSEM and the method is applicable to mask repair and circuit editing processes with resolution requirements in the low nm range or even below.
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