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Abstract

Method for producing a superconducting transistor comprising:

producing a dummy gate on a first part of a semiconducting layer;producing superconducting electrodes such that the first part of the semiconducting layer comprises sides edges arranged against parts of the superconducting electrodes, and comprising a deposition of a superconducting material layer having first parts arranged against side edges of the dummy gate and second parts forming parts of the superconducting electrodes;producing lateral spacers next to the first parts of the superconducting material layer and on the second parts of the superconducting material layer;removing the dummy gate and the first parts of the superconducting material layer, creating a gate location arranged between the lateral spacers and above the first part of the semiconducting layer and above said parts of the superconducting electrodes;producing a gate in the gate location.

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First Claim