SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Aug 8, 2024
app pub date -
Apr 15, 2024
filing date -
Aug 31, 2020
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.
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