STACKED SEMICONDUCTOR DIE ARCHITECTURE WITH MULTIPLE LAYERS OF DISAGGREGATION

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United States of America Patent

APP PUB NO 20240266323A1
SERIAL NO

18640867

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Abstract

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Stacked semiconductor die architectures having one or more base dies and techniques of forming such architectures are described. The stacked semiconductor die architectures may be included in or used to form semiconductor packages. A stacked semiconductor die architecture can include: (i) one or more base dies (e.g., at least one disaggregated base die, at least one monolithic base die, etc.); and (ii) a carrier wafer having multiple stacked semiconductor dies embedded in the carrier wafer, where the carrier wafer is on the one or more base dies and where one or more interconnect structures (e.g., wires, bumps, microbumps, pillars, etc.) couple the one or more base dies to the carrier wafer and/or the stacked semiconductor dies.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPSANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BURTON, Edward Hillsboro, US 29 371

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