Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm

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United States of America Patent

PATENT NO 12085846
APP PUB NO 20240264521A1
SERIAL NO

18575736

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Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm is provided, including: obtaining first mask data according to a target pattern, and constructing a level set function; performing forward simulation, so as to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask; obtaining a photoresist pattern according to the electric field distribution on the photoresist, and calculating an imaging error between the photoresist pattern and the target pattern; performing accompanying simulation, so as to obtain a second structural vector electric field distribution; obtaining a level set gradient by means of performing calculation according to the first structural vector electric field distribution, the second structural vector electric field distribution and the imaging error; and evolving the level set function, performing update to obtain second mask data, and performing iterative calculation until mask data meeting a preset condition is obtained.

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Patent OwnerAddress
THE INSTITUTE OF OPTICS AND ELECTRONICS THE CHINESE ACADEMY OF SCIENCESP O BOX 350 SHUANGLIU CHENGDU SICHUAN 610209

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kong, Weijie Sichuan, CN 4 1
Liu, Xiangzhi Sichuan, CN 1 0
Luo, Xiangang Sichuan, CN 119 201
Wang, Changtao Sichuan, CN 9 18
Yin, Ge Sichuan, CN 1 0

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