GRADED TIP CUPROUS OXIDE SINGLE CRYSTAL MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOF

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United States of America Patent

APP PUB NO 20240263338A1
SERIAL NO

18355469

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Abstract

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Disclosed are a graded tip cuprous oxide single crystal material and a preparation method and application thereof. A first-level structure of the material is a regular octahedron, a second-level structure of the material is pyramid-shaped tips evenly distributed on the first-level structure, a size of the tip ranges from 40 nm to 180 nm, and a surface coverage degree ranges from 10% to 100%. The preparation method thereof comprises the following steps of: separating out a seed crystal from a mixed solution of copper soluble salt, concentrated brine, and strong alkali in advance to obtain a turbid liquid; and adding a reducing agent into the turbid liquid for seed-induced growth, adding excessive distilled water to dissolve the seed, and filtering, washing and drying to obtain the graded tip cuprous oxide single crystal material.

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Patent Owner(s)

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UNIV NANKAI中国天津市南开区卫津路94号 TIANJIN 300071 300071

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Jun Tianjin, CN 912 6715
CHENG, Fangyi Tianjin, CN 1 0
LI, Haixia Tianjin, CN 7 19
LI, Jinhan Tianjin, CN 3 2
WANG, Huan Tianjin, CN 313 628
YAN, Zhenhua Tianjin, CN 7 4

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