SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Aug 1, 2024
app pub date -
Nov 27, 2023
filing date -
Jan 26, 2023
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Abstract
A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type including silicon carbide; a base region of a second conductivity-type provided on a top surface side of the drift layer; a main region of the first conductivity-type provided on a top surface side of the base region; a gate electrode buried inside a trench with a gate insulating film interposed; and a main electrode provided in contact with the main region, wherein the main region includes a first region with a bottom surface in contact with the base region, and a second region including a 3C structure and provided at an upper part of the first region separately from the gate insulating film inside the trench so as to be in contact with the main electrode.
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