TRANSISTOR DEVICES, POWER DEVICES, AND METHOD OF MANUFACTURING THEREOF
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United States of America Patent
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Issued Date -
Aug 1, 2024
app pub date -
Apr 15, 2024
filing date -
Oct 18, 2021
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Abstract
A member includes a silicon base substrate layer, a transition layer, a gallium nitride (GaN) buffer, a first aluminum gallium nitride (AlGaN) barrier layer, a first p-doped gallium nitride (pGaN) layer, where a portion of the GaN buffer layer forms a first GaN channel layer. The member further includes a second GaN channel layer, a second AlGaN barrier layer, and a second pGaN layer. The second pGaN layer is connected to the first pGaN layer by a connecting pGaN portion. The member further includes a gate contact, a source contact, and a drain contact, where the first pGaN channel layer is arranged between the source contact and the drain contact.
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