TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jul 25, 2024
app pub date -
Dec 8, 2023
filing date -
Jan 19, 2023
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Abstract
A trench gate semiconductor device includes a semiconductor substrate, first and second trenches, a gate insulating film, a gate electrode, and an upper electrode. The semiconductor substrate includes an n-type first semiconductor region in contact with the upper electrode, a p-type body region extending from the gate insulating film in the first trench to the gate insulating film in the second trench below the first semiconductor region, and an n-type second semiconductor region extending from the gate insulating film in the first trench to the gate insulating film in the second trench below the body region. A maximum value of a distance between the first trench and the second trench in a depth range in which the body region is disposed is less than 200 nm. The distance between the first trench and the second trench at the upper surface of the semiconductor substrate is larger than the maximum value.
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