METHODS OF FORMING SEMICONDUCTOR DEVICES
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United States of America Patent
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Issued Date -
Jul 25, 2024
app pub date -
Feb 28, 2024
filing date -
Nov 30, 2018
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Abstract
In an embodiment, a method includes: forming a fin extending from a substrate, the fin having a first width and a first height after the forming; forming a dummy gate stack over a channel region of the fin; growing an epitaxial source/drain in the fin adjacent the channel region; and after growing the epitaxial source/drain, replacing the dummy gate stack with a metal gate stack, the channel region of the fin having the first width and the first height before the replacing, the channel region of the fin having a second width and a second height after the replacing, the second width being less than the first width, the second height being less than the first height.
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