FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 25, 2024
app pub date -
Feb 26, 2024
filing date -
Aug 30, 2021
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully