SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 25, 2024
app pub date -
Jan 19, 2023
filing date -
Jan 19, 2023
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor channel layer and a semiconductor barrier layer disposed on a substrate. A passivation layer covers the semiconductor barrier layer. A first gate electrode and a second gate electrode are laterally separated from each other and at least partially disposed in the passivation layer respectively. Along a first direction, a first gate length of the first gate electrode is less than a second gate length of the second gate electrode. A source electrode and a drain electrode are disposed on the semiconductor channel layer. The second gate electrode is electrically connected to the source electrode. The first gate electrode and the second gate electrode are electrically isolated from each other.
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