IN SITU DAMAGE FREE ETCHING OF Ga2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES
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United States of America Patent
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Issued Date -
Jul 25, 2024
app pub date -
Mar 14, 2022
filing date -
May 13, 2021
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Abstract
A method for using gallium beam flux in an ultra-low vacuum environment to etch Ga2O3 epilayer surfaces is provided. An Ga2O3 epilayer surface (105) is patterned by applying a SiO2 mask (107) that corresponds to a desired structure (810). The patterned surface is then placed in an ultra-low vacuum environment (130) and is heated to a very high temperature (820; 830). At the same time, a gallium flux is supplied to the patterned surface in the ultra-low vacuum environment (840). The gallium flux causes etching in the patterned surface that is not covered by the SiO2 mask. Using this method, sub-micron (˜100 nm) three-dimensional (3D) structures like fins, trenches, and nano-pillars can be fabricated with vertical sidewalls.
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