DRY ETCH OF BORON-CONTAINING MATERIAL
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United States of America Patent
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Issued Date -
Jul 25, 2024
app pub date -
Jan 19, 2023
filing date -
Jan 19, 2023
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Abstract
Exemplary methods of semiconductor processing may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a boron-containing material overlying a carbon-containing material. The methods may include generating plasma effluents of the fluorine-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor. The methods may include removing the boron-containing material from the substrate.
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