EXHAUST GAS PROCESSING APPARATUS HAVING PLASMA SOURCE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

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United States of America Patent

APP PUB NO 20240249925A1
SERIAL NO

18390956

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Abstract

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An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ann, Kookjin Suwon-si, KR 1 0
Gim, Suji Suwon-si, KR 8 4
Heo, Young Suwon-si, KR 17 60
KIM, JAEHYUN Suwon-si, KR 446 4512
Sung, Taijong Suwon-si, KR 2 0
Yook, Sunwoo Suwon-si, KR 3 1

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