METHOD AND SYSTEM TO INTRODUCE BRIGHT FIELD IMAGING AT STITCHING AREA OF HIGH-NA EUV EXPOSURE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 25, 2024
app pub date -
May 5, 2023
filing date -
Jan 20, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A first bright field reticle and a second bright field reticle are utilized for a double exposure EUV photolithography process in which exposure areas of the first and second bright field reticles overlap. The first and second reticles each include, respectively, a substrate, a reflective multilayer on the substrate, a main pattern of absorption material on the reflective multilayer, a black border area, and an additional absorption area of the absorption material between the black border and the main pattern.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully