SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE WIRING STRUCTURES AVOIDING SHORT CIRCUIT THEREOF
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United States of America Patent
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Issued Date -
Jul 18, 2024
app pub date -
Mar 29, 2024
filing date -
Jun 22, 2021
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Abstract
A semiconductor device includes: a substrate; a memory cell region over the substrate; a peripheral region over the substrate, the peripheral region being adjacent to the memory cell region; and a plurality of first and second word-lines extending across the memory cell region and the peripheral region; wherein the plurality of first word-lines and the plurality of second word-lines are arranged alternately with each other; and wherein the length of the first word-line in the peripheral region is longer than the length of the second word-line in the peripheral region.
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