ACOUSTIC RESONATOR BASED ON HIGH CRYSTALLINITY DOPED PIEZOELECTRIC THIN FILM, AND METHOD FOR PREPARING THE SAME
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United States of America Patent
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Issued Date -
Jul 18, 2024
app pub date -
Jun 21, 2021
filing date -
Jun 21, 2021
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Abstract
The present disclosure provides an acoustic resonator based on a high crystallinity doped piezoelectric thin film, including: a substrate; a seed layer arranged on the substrate, wherein the substrate and the seed layer form a Bragg reflection structure; a doped layer arranged on the seed layer; and a metal electrode arranged on the doped layer; wherein the seed layer is configured to increase a lattice matching degree between the doped layer and the substrate, and configured to reflect a sound wave emitted by the doped layer. The present disclosure further provides a method for preparing the acoustic resonator described above.
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