SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 18, 2024
app pub date -
Nov 30, 2023
filing date -
Jan 13, 2023
priority date (Note) -
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Abstract
A first impurity region and a second impurity region are alternately formed along a longitudinal direction of a first trench. The second impurity region has: a first contact side in contact with the first trench; and a second contact side in contact with a second trench adjacent to the first trench. A first linear portion is defined to extend from a boundary of the first contact side toward the second trench, and a second linear portion is defined to extend from a boundary of the second contact side toward the first trench. A first angle between the first trench and the first linear portion connected to the first contact side is less than 90° and a second angle between the second trench and the second linear portion connected to the second contact side is less than 90° .
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