Boron-Coated Back-Illuminated Image Sensor With Fluoride-Based Anti-Reflection Coating
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United States of America Patent
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Jul 18, 2024
app pub date -
Dec 20, 2023
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Jan 12, 2023
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Back-illuminated image sensors for detecting short wavelength radiation (e.g., deep ultraviolet (DUV) and vacuum ultraviolet (VUV) light) include a semiconductor membrane, circuit elements formed on a frontside surface of the semiconductor membrane, and a pure boron coating on the backside surface of the semiconductor membrane. A two-part anti-reflective coating is formed over the pure boron coating and includes a thin oxide or nitride protection layer disposed between the pure boron coating and a fluoride-based anti-reflection layer. A method for fabricating the image sensors may include performing plasma atomic layer deposition (plasma ALD) processes to sequentially generate the pure boron coating, the oxide/nitride protection layer and then the fluoride-based anti-reflection layer. The image sensors may be configured as charge coupled devices (CCDs), complementary metal oxide semiconductor (CMOS) sensors, or as photodiodes, and arranged as two-dimensional (2D) area sensors or a one-dimensional (1D) array sensors.
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