SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jul 18, 2024
app pub date -
Feb 15, 2023
filing date -
Jan 13, 2023
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Abstract
A method for fabricating a semiconductor device includes the steps of first forming a first gate structure on a substrate and then forming a first epitaxial layer adjacent to the first gate structure. Preferably, a top surface of the first epitaxial layer includes a first curve, a second curve, and a third curve connecting the first curve and the second curve, in which the first curve and the second curve include curves concave downward while the third curve includes a curve concave upward.
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