ETCHING DEVICE AND ETCHING METHOD
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United States of America Patent
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Issued Date -
Jul 18, 2024
app pub date -
Jan 9, 2024
filing date -
Jan 13, 2023
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Abstract
An etching device includes a discharge tube irradiated with microwaves and a gas supplying unit configured to supply a gas mixture to the discharge tube. The etching device is configured to generate plasma of the gas mixture in the discharge tube and etch a silicon-containing film on a substrate by delivering the plasma and a fluorine-containing gas to the silicon-containing film. The gas mixture contains hydrogen atoms, nitrogen atoms, and oxygen atoms. The discharge tube is formed from a main component of aluminum oxide.
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