SCANNING ELECTRON MICROSCOPE IMAGE DISTORTION CORRECTION METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE CORRECTION METHOD

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United States of America Patent

APP PUB NO 20240242317A1
SERIAL NO

18528427

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Abstract

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An scanning electron microscope (SEM) image distortion correction method includes obtaining at least one SEM image of holes provided on a wafer in a two-dimensional array structure, the holes including at least one central hole within a central region of the at least one SEM image and a plurality of peripheral holes outside the central region, expanding each of the plurality of peripheral holes in a minor axis direction such that a ratio of a minor axis to a major axis of each of the plurality of peripheral holes is about 1:1, and expanding each of the plurality of peripheral holes in multiple directions in the at least one SEM image such that a diameter of the at least one central hole and a diameter of at least one of the plurality of peripheral holes are substantially equal to each other.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JUNG, Woojin Suwon-si, KR 30 162
KANG, Minsu Suwon-si, KR 8 7
KIM, Janghoon Suwon-si, KR 11 14
KIM, Kwangeun Suwon-si, KR 9 1
LEE, Sungeun Suwon-si, KR 75 243
PARK, Seoyoung Suwon-si, KR 6 14
YUN, Sangho Suwon-si, KR 10 1

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