METHOD OF MEASURING OVERLAY AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME
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United States of America Patent
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Issued Date -
Jul 18, 2024
app pub date -
Dec 5, 2023
filing date -
Jan 16, 2023
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Abstract
A method of measuring overlay, including forming an active region on a cell region of a substrate and forming at least one overlay key structure on a scribe lane region of the substrate, forming a first mask pattern on the active region and forming a first sub-pattern on the overlay key structure, checking an alignment using the first sub-pattern, performing a first ion implantation process into the substrate, forming a second mask pattern on the active region and forming a second sub-pattern on the overlay key structure, checking the alignment using the second sub-pattern, and performing a second ion implantation process into the substrate, wherein a second width of the second sub-pattern is greater than a first width of the first sub-pattern.
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