ELECTRON-ENHANCED ATOMIC LAYER DEPOSITION (EE-ALD) METHODS AND DEVICES PREPARED BY SAME
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United States of America Patent
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Jul 18, 2024
app pub date -
Jan 13, 2023
filing date -
Jan 13, 2023
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Abstract
In one aspect, the present invention provides a method of promoting nucleation and/or growth of a conductive film on a solid substrate. In certain embodiments, the method comprises contacting at least a portion of the surface of the solid substrate with a volatile metal precursor in the presence of a background gas, wherein the volatile metal precursor is chemisorbed or physisorbed to at least a portion of the surface of the solid substrate to provide a metal precursor-adsorbed surface, and contacting at least a portion of the metal precursor-adsorbed substrate with an electron beam in the presence of the background gas. The present invention further provides nanodevices and/or microdevices comprising a conductive film prepared according to the methods described herein.
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