New Precursors For Depositing Films With High Elastic Modulus
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United States of America Patent
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Issued Date -
Jul 18, 2024
app pub date -
May 16, 2022
filing date -
May 19, 2021
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Abstract
A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.50, an elastic modulus of from ˜6 to ˜32 GPa, and an at. % carbon from ˜10 to ˜35 as measured by XPS.
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