IMAGE SENSOR AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Jul 11, 2024
app pub date -
Jan 5, 2024
filing date -
Jan 10, 2023
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Abstract
An image sensor includes a first substrate and a photoelectric structure in the first substrate. The first substrate includes opposite first surface and second surfaces. The conductivity type of the photoelectric structure is opposite to that of the first substrate. The photoelectric structure includes a second doped region and multiple first doped regions. Each of the first doped regions is connected to the second doped region. The distance from the second doped region to the first surface is smaller than the distance from the first doped region to the first surface. The size of the first doped region in a direction parallel to the first surface is smaller than or equal to the size of the second doped region in the direction. The quantum efficiency (QE), detection band, and photo-sensing capability are improved.
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