LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240136413A1
SERIAL NO

18277658

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Abstract

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A laterally diffused metal oxide semiconductor device and a preparation method thereof are disclosed. The semiconductor device includes: a substrate; a body region having a first conductivity type and formed in the substrate; a drift region, having a second conductivity type, formed in the substrate and adjacent to the body region; a field plate structure, formed on the drift region, a lower surface of an end of the field plate structure close to the body region being flush with the upper surface of the substrate, and the end of the field plate structure close to the body region also having an upwardly extending inclined surface; and a drain region, having a second conductivity type, formed in an upper layer of the drift region, and in contact with the end of the field plate structure away from the body region.

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Patent Owner(s)

  • CSMC TECHNOLOGIES FAB2 CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, SHUXIAN WUXI NEW DISTRICT, JIANGSU, CN 46 282
HUANG, GANG WUXI NEW DISTRICT, JIANGSU, CN 198 853
HUANG, YU WUXI NEW DISTRICT, JIANGSU, CN 357 4038
JIN, HONGFENG WUXI NEW DISTRICT, JIANGSU, CN 5 4
JIN, HUAJUN WUXI NEW DISTRICT, JIANGSU, CN 22 23
LI, CHUNXU WUXI NEW DISTRICT, JIANGSU, CN 8 74
LIN, FENG WUXI NEW DISTRICT, JIANGSU, CN 436 3851
YANG, BIN WUXI NEW DISTRICT, JIANGSU, CN 608 3858

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