SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 11, 2024
app pub date -
Mar 21, 2024
filing date -
Dec 1, 2020
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Abstract
A semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. The first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. The semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.
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