MODIFYING PATTERNED FEATURES USING A DIRECTIONAL ETCH
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 25, 2024
app pub date -
Oct 19, 2022
filing date -
Oct 19, 2022
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Disclosed herein are approaches for modifying patterned features using a directional etch. In one approach, a method may include providing a stack of layers of a semiconductor device, forming an opening through the stack of layers, the opening defined by a first sidewall and a second sidewall, and delivering ions into the first sidewall in a reactive ion etching process. The ions maybe delivered at a first non-zero angle relative to a perpendicular extending from the substrate, wherein the reactive ion etching process removes a first portion of the stack of layers from just a lower section of the first sidewall.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully