METHOD FOR PRODUCING A GROWTH SUBSTRATE AND GROWTH SUBSTRATE
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United States of America Patent
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Jul 11, 2024
app pub date -
Jul 7, 2022
filing date -
Jul 29, 2021
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Abstract
In an embodiment a method for producing a growth substrate includes providing a substrate with a main surface, arranging a layer sequence on the main surface of the substrate, wherein the layer sequence comprises at least one semiconductor layer comprising a III-V compound semiconductor material, and annealing the layer sequence on the substrate, wherein the layer sequence comprises at least one intermediate layer and/or wherein a cover layer is arranged on the layer sequence, wherein a temperature during annealing is at least 1400° C., wherein the intermediate layer comprises a material selected from the following group: carbides, nitrides, oxides, oxynitrides, wherein the nitrides are nitrides of silicon, titanium, tantalum, yttrium, hafnium, scandium, tungsten, or zirconium, and wherein the cover layer comprises one of the following materials: tungsten nitride, aluminum carbonitride, molybdenum, tungsten, titanium, tantalum, hafnium, aluminum, titanium tungsten, graphite, or a photoresist.
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