HARD MASK AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
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United States of America Patent
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Jul 11, 2024
app pub date -
Sep 19, 2023
filing date -
Jan 9, 2023
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Abstract
A hard mask may include a first layer and a second layer on the first layer. Each of the first layer and the second layer may include an amorphous carbon layer. The first layer may have a first extinction coefficient. The second layer may have a second extinction coefficient and the second extinction coefficient may be different from the first extinction coefficient. The first extinction coefficient and the second extinction coefficient each may be in a range of 0.4 to 0.7.
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