Importance

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Abstract

Semiconductor structure and forming method thereof are provided. The semiconductor structure includes a substrate and a plurality of transistors located over the substrate. A transistor of the plurality of transistors includes: a channel layer parallel to a substrate surface, a gate structure surrounding the channel layer, and a source/drain doped region located on two sides of the gate structure. The source/drain doped region is in contact with the channel layer, and the gate structure is electrically isolated from the source/drain doped region. The semiconductor structure also includes a first metal structure located over the substrate, and a second metal structure located over the first metal structure and the gate structure. The first metal structure is in contact with the source/drain doped region. The first metal structure, the source/drain doped region and the gate structure are arranged along a first direction. The first direction is parallel to the substrate surface.

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First Claim