TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE
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United States of America Patent
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Issued Date -
Jul 4, 2024
app pub date -
Dec 8, 2023
filing date -
Dec 29, 2022
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Abstract
Vertical junction field-effect transistors (VJFETs) with integrated source-drain anti-parallel diodes are described. In an embodiment, a trench VJFET with integrated source-drain anti-parallel diodes structure is coupled with a low-voltage metal oxide semiconductor field-effect transistor (MOSFET) in a dual gate cascode configuration.
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