TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS
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United States of America Patent
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Issued Date -
Jul 4, 2024
app pub date -
Dec 28, 2022
filing date -
Dec 28, 2022
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Abstract
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for using layer transfer techniques to bond a silicon layer with a GaN layer, where the silicon layer includes a first portion of a device, for example a transistor, and the GaN layer includes a second portion of the device. Other embodiments may be described and/or claimed.
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