SUBSTRATES OF SEMICONDUCTOR DEVICES FOR HEAT DISSIPATION
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United States of America Patent
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Issued Date -
Jul 4, 2024
app pub date -
Dec 29, 2022
filing date -
Dec 29, 2022
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel, and a semiconductor device. The channel is in the substrate for a fluid to flow through and includes a first channel portion having a first volume, a second channel portion having a second volume, and a third channel portion connecting the first channel portion to the second channel portion. The third channel portion has a third volume smaller than the first volume and the second volume. The semiconductor device is vertically over the channel.
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