SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Jul 4, 2024
app pub date -
Dec 26, 2023
filing date -
Dec 28, 2022
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Abstract
This SiC epitaxial wafer includes a SiC epitaxial layer on a surface thereof, wherein results of irradiating the SiC epitaxial wafer with excitation light having a wavelength of 313 nm and measuring an emission intensity of photoluminescence light having a wavelength of 660 nm or more for each square measurement region of 2 mm on a side, which is obtained by dividing the surface, satisfy the following formula (1).
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