METHOD OF FORMING A CONFORMAL AND CONTINUOUS CRYSTALLINE SILICON NANOSHEET WITH IMPROVED ELECTRICAL PROPERTIES AT LOW DOPING LEVELS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 4, 2024
app pub date -
Dec 27, 2022
filing date -
Dec 27, 2022
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method of forming a conformal and continuous crystalline Si film on a surface of a substrate comprises: exposing the substrate to a vapor of a first Si-containing precursor under a first temperature; allowing a seed film being formed onto the surface; exposing the substrate to a vapor of a second Si-containing precursor and a vapor of a dopant precursor under a second temperature; depositing a doped amorphous Si-containing film onto the seed film by a chemical vapor deposition (CVD) process; and annealing the substrate to crystalize the doped amorphous Si-containing film forming the conformal and continuous crystalline Si film on the surface. The first Si-containing precursor is (diisobutylamine)trisilane ((iBu)2-N—(SiH2)2—SiH3).
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully