SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

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United States of America Patent

APP PUB NO 20240222112A1
SERIAL NO

18428866

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Abstract

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A technique is provided to perform: (a) forming a first film exerting a predetermined adhesive force on an inner surface of a concave structure formed on a surface of a substrate by supplying a first source gas to the substrate; and (b) forming a second film exerting an adhesive force smaller than that of the first film on the first film by supplying a second source gas to the substrate.

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Patent Owner(s)

Patent OwnerAddress
KOKUSAI ELECTRIC CORPORATION3-4 KANDAKAJI-CHO CHIYODA-KU TOKYO 1010045 ?1010045

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKAE, Naonori Toyama, JP 53 2373
OZAKI, Takashi Toyama, JP 136 3577
SHIMIZU, Tomiyuki Toyama, JP 6 4

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