METHOD OF REMOVING DEFECT OF MASK

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United States of America Patent

APP PUB NO 20240219826A1
SERIAL NO

18522627

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Abstract

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A method of removing a defect of a mask may include generating a probe profile, the probe profile including characteristics of a probe of an atomic force microscope (AFM); generating a design-based reference image of a defect area by applying the probe profile to a design image of the defect area of the mask including a location of the defect; obtaining an AFM image of the defect area by scanning the defect area of the mask using the probe of the AFM; recognizing the defect as a recognized defect by comparing the AFM image of the defect area with the design-based reference image; and removing the recognized defect using the probe of the AFM.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HWANG, Yoonki Suwon-si, KR 1 0
LEE, Sanghyeon Suwon-si, KR 2 0

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