REFLECTIVE MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

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United States of America Patent

APP PUB NO 20240219824A1
SERIAL NO

18383543

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An extreme ultraviolet (EUV) reflective mask including: a mask substrate, a reflection layer on the mask substrate, and an absorption layer on the reflection layer, wherein the absorption layer includes a main pattern and non-diffraction patterns the main pattern, the non-diffraction patterns form a honeycomb shape, a pitch between the non-diffraction patterns is less than a diffraction limit, and the main pattern is isolated from the non-diffraction patterns.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

International Classification(s)

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  • 2023 Application Filing Year
  • H01L Class
  • 19835 Applications Filed
  • 4214 Patents Issued To-Date
  • 21.25 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHUNG, NOYOUNG Suwon-si, KR 16 15
JEONG, SEOKYUN Suwon-si, KR 1 0
MISAKA, AKIO Suwon-si, KR 57 813

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3335716251501 - 1011 - 20020004000600080001000012000140001600018000200002200024000260002800030000320003400036000

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