METHODS FOR PRODUCING OFF-ORIENTATION SINGLE CRYSTAL SILICON WAFERS
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United States of America Patent
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Issued Date -
Jul 4, 2024
app pub date -
Dec 26, 2023
filing date -
Dec 29, 2022
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Abstract
Methods for producing an off-orientation single crystal silicon wafer are disclosed. After a single crystal silicon ingot is grown, the single crystal silicon ingot is ground to increase an off-orientation of the single crystal silicon ingot. A wafer is sliced from ground single crystal silicon ingot. The wafer has an off-orientation greater than the ground single crystal silicon ingot.
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