SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

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United States of America Patent

APP PUB NO 20240215227A1
SERIAL NO

18324159

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Abstract

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A semiconductor device includes a horizontal layer spaced apart from a lower structure to extend in a direction parallel to the lower structure; a vertical conductive line extending in a direction perpendicular to the lower structure and coupled to a first-side end of the horizontal layer; a data storage element coupled to a second-side end of the horizontal layer; and a horizontal conductive line including a first horizontal conductive line and a second horizontal conductive line that are vertically asymmetrical with the horizontal layer interposed therebetween.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHO, Jin Sun Gyeonggi-do, KR 9 10
OH, Dong Yean Gyeonggi-do, KR 17 47

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