N-TYPE SEMICONDUCTOR LAYER, SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER GENERATION SYSTEM
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United States of America Patent
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Issued Date -
Jun 27, 2024
app pub date -
Mar 8, 2024
filing date -
Sep 20, 2022
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Embodiments described herein relate generally to a n-type layer, a solar cell, a multi-junction solar cell, a solar cell module, and a photovoltaic power generation system. An n-type layer according to an embodiment includes amorphous gallium oxide as a main component. A conductive type of the n-type layer is n-type. One or more lanthanoid series elements whose amount is more than 0 [atom %] and 67 [atom %] or less of Ga contained in the amorphous gallium oxide are doped at Ga (II) site of the amorphous gallium oxide.
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