SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20240213307A1
SERIAL NO

18427607

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A p-type impurity concentration profile in a depth direction of a p-type base region is adjusted by two or more stages of ion implantation to the p-type base region. The two or more stages of ion implantation are each set to have a mutually different acceleration voltage and a dose amount that is lower the higher is the acceleration voltage. The p-type impurity concentration profile is asymmetrical about a depth position of a highest impurity concentration and the impurity concentration decreases from this depth position in a direction to n+-type source regions and in a direction to an n+-type drain region. In the p-type impurity concentration profile, the impurity concentration decreases, forming a step at one or more different depth positions closer to the n+-type drain region than is the depth position of the highest impurity.

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FUJI ELECTRIC CO LTD1-1 TANABESHINDEN KAWASAKI-KU KAWASAKI-SHI 210-9530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KINOSHITA, Akimasa Matsumoto-city, JP 64 225
MORIYA, Tomohiro Matsumoto-city, JP 24 82

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3335716251501 - 1011 - 20020004000600080001000012000140001600018000200002200024000260002800030000320003400036000

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