MONOLITHIC INTEGRATION OF MULTICOLOR LIGHT EMITTING DIODES
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United States of America Patent
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Jun 27, 2024
app pub date -
Jun 24, 2022
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Jun 25, 2021
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Abstract
Monolithic integration of multicolor light-emitting diodes with highly spatially uniform emission wavelength are realized in a single selective area epitaxy process. Pronounced emission peaks with very narrow spectral linewidths are also achieved. The indium contents and emission colors are tuned by precisely controlling the nanowire emitter diameter and lattice constant. The emission wavelengths exhibit small variations of only a few nanometers among individual nanowire emitters over an areal region.
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