METHODS AND APPARATUSES FOR CRYSTAL GROWTH

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United States of America Patent

APP PUB NO 20240209543A1
SERIAL NO

18601996

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Abstract

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The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

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Patent Owner(s)

Patent OwnerAddress
MEISHAN BOYA ADVANCED MATERIALS CO LTDNO 3 JUNLE ROAD MEISHAN HIGH-TECH INDUSTRIAL PARK MEISHAN SICHUAN 620010 620010

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
GU, Peng Meishan, CN 41 99
LI, Min Meishan, CN 751 7676
LIANG, Zhenxing Meishan, CN 33 27
WANG, Yu Meishan, CN 1481 8143

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