SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
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United States of America Patent
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Jun 20, 2024
app pub date -
Dec 11, 2023
filing date -
Dec 11, 2023
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Abstract
A semiconductor structure and a formation method of the semiconductor structure are provided in the present disclosure. The semiconductor structure includes a substrate, including a first device region and a second device region; a first device layer on the substrate, where a first transistor at the first device region is in the first device layer; a second device layer on the first device layer, where a second transistor at the second device region is in the second device layer, and projections of the first transistor and the second transistor on a surface of the substrate are non-overlapped with each other; and an electrical interconnection structure in the first device layer and the second device layer, where the electrical interconnection structure is electrically connected to each of the first transistor and the second transistor.
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